Third-generation semiconductor materials could adv

晁元國際半導體股份有限公司

The third-generation semiconductor SiC MOSFET

Design and manufacture of key parts and modules

MaxPower SiC Semiconductor Co., LTD can provide third-generation semiconductor SiC MOSFETs - key parts and module design and manufacturing. 
We are in house established as IDM factory with the up-stream to down-stream supplier chain. Series of R&D and testing equipment are already fully equipped, and our major production of SiC Substrate, EPI wafer and Chip process. 

Our R&D team members have experience studying in the United States, and their academic backgrounds include physics, microelectronics, electronic engineering, and materials science. Our company has very closely cooperation with colleges, universities and other scientific research institutions, and has in-depth exchanges in the fields of material preparation, device design, process improvement, testing and debugging.

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Product desciption

M2D-1200-0080

M2D-1200-0080

Silicon Carbide MOSFET Bare Die

M2M-0030-120D

M2M-0030-120D

Silicon Carbide MOSFET

EconoDual Power Module

EconoDual Power Module

HPD Power Module

HPD Power Module

M2D-1200-0017

M2D-1200-0017

Silicon Carbide MOSFET Bare Die

M2D-0650-0060

M2D-0650-0060

Silicon Carbide Power MOSFET Bare Die

M3S-0030-065D

M3S-0030-065D

Silicon Carbide Schottky Diode

M2M-0040-120K

M2M-0040-120K

Silicon Carbide MOSFET

EasyPAK power module

EasyPAK power module

62mm_H Power Module

62mm_H Power Module

M4M-0040-120D

M4M-0040-120D

Silicon Carbide MOSFET

M2M-0080-120D

M2M-0080-120D

Silicon Carbide Power MOSFET

M2D-1200-0040

M2D-1200-0040

Silicon Carbide MOSFET Bare Die

application industry

Electric vehicle industry

Charging pile industry

Photovoltaic industry

wind energy industry

Power grid industry

Rail transit industry

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